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Title: Nanoparticle composites: FePt with wide-band-gap semiconductor
Authors: Lu, M. 
Gong, H. 
Song, T.
Wang, J.-P.
Zhang, H.-W.
Zhou, T.J.
Keywords: FePt
Nanoparticle composite
Wide-band-gap semiconductor
Issue Date: Aug-2006
Citation: Lu, M., Gong, H., Song, T., Wang, J.-P., Zhang, H.-W., Zhou, T.J. (2006-08). Nanoparticle composites: FePt with wide-band-gap semiconductor. Journal of Magnetism and Magnetic Materials 303 (2 SPEC. ISS.) : 323-328. ScholarBank@NUS Repository.
Abstract: We present a simple way to synthesize FePt and ZnO (wide-band-gap semiconductor) nanoparticle composites. The FePt nanoparticles were fabricated using the method reported by Sun et al. By controlling the heating rate, 3 nm FePt nanoparticles were synthesized. Well-dispersed FePt and ZnO nanoparticle composites were prepared by further adding zinc acetate and oleyl amine into the 3 nm FePt nanoparticle dispersion. By controlling the molar ratio of the FePt and zinc acetate, FePt and ZnO nanoparticle composites with different FePt particle fractions were obtained. The intensity of photo luminescence spectra of the nanoparticle composites increases very much with decreasing FePt particle fraction, whereas the peak position shifts a little. After annealing at 550 °C for half an hour, the nanoparticle composites become magnetically hard or semi-hard with coercivity much dependent on the FePt particle volume fraction. The coercivity of the composites increases with annealing temperature. The composites hold the promise of applications in new generation recording and/or optical devices. © 2006.
Source Title: Journal of Magnetism and Magnetic Materials
ISSN: 03048853
DOI: 10.1016/j.jmmm.2006.01.246
Appears in Collections:Staff Publications

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