Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2005.09.023
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dc.titlePerformance evaluation of a newly developed electrolytic system for stable thinning of silicon wafers
dc.contributor.authorIslam, M.M.
dc.contributor.authorSenthil Kumar, A.
dc.contributor.authorBalakumar, S.
dc.contributor.authorLim, H.S.
dc.contributor.authorRahman, M.
dc.date.accessioned2014-04-24T10:17:30Z
dc.date.available2014-04-24T10:17:30Z
dc.date.issued2006-05-10
dc.identifier.citationIslam, M.M., Senthil Kumar, A., Balakumar, S., Lim, H.S., Rahman, M. (2006-05-10). Performance evaluation of a newly developed electrolytic system for stable thinning of silicon wafers. Thin Solid Films 504 (1-2) : 15-19. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.023
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51639
dc.description.abstractThe Electrolytic In-process Dressing (ELID) grinding process has led to significantly better achievements compared to other attempts in maintaining sharp grits throughout the process during efficient machining of silicon wafers. This process, however, shows nonlinear electrolytic dressing and hence unstable forces during thinning. A new electrolytic system, Injection Electrode (IE) assisted electrolysis, has been tried here for this purpose to thin down silicon wafers with generation of required surface qualities. IE assisted electrolysis at lower injection flow rate exhibited good condition of the grinding wheel. This led to the successful thinning of silicon wafers down to 70 μm thickness from 750 μm with superior surface qualities. © 2005 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2005.09.023
dc.sourceScopus
dc.subjectIE assisted ELID
dc.subjectSelf sharpening ability
dc.subjectSingle crystal silicon wafers
dc.subjectThinning performance
dc.typeConference Paper
dc.contributor.departmentTROPICAL MARINE SCIENCE INSTITUTE
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1016/j.tsf.2005.09.023
dc.description.sourcetitleThin Solid Films
dc.description.volume504
dc.description.issue1-2
dc.description.page15-19
dc.description.codenTHSFA
dc.identifier.isiut000236486200005
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