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Title: Ab initio simulations of low-k and ultra low-k dielectric interconnects
Authors: Tan, V.B.C. 
Dai, L. 
Yang, S.W.
Chen, X.T.
Wu, P.
Keywords: Ab initio molecular dynamics
Diffusion barrier
Low-k dielectrics
Issue Date: 2007
Citation: Tan, V.B.C.,Dai, L.,Yang, S.W.,Chen, X.T.,Wu, P. (2007). Ab initio simulations of low-k and ultra low-k dielectric interconnects. Diffusion and Defect Data Pt.B: Solid State Phenomena 121-123 (PART 2) : 1061-1064. ScholarBank@NUS Repository.
Abstract: Ab initio molecular dynamics simulations were carried out to study low-k/ultra low-k dielectric systems comprising Cu/Ta/SiLK-like polymer. A study of the motion of single metal atoms of Cu and Ta in the SiLK-like polymer showed that Cu atom motions are effected by jumps between cavities inside the polymer and that Ta is more sluggish than Cu not only because of its larger mass but also because of stronger affinity to the polymer. It was also found that crosslinking of the polymer did not affect the motion of the metal atoms. Simulations of deposition showed that a thin Ta diffusion barrier does not have good structural integrity to prevent Cu-diffusion when directly deposited onto the SiLK; the barrier performance was greatly improved after introducing a Si-based film between the Ta and SiLK.
Source Title: Diffusion and Defect Data Pt.B: Solid State Phenomena
ISBN: 3908451302
ISSN: 10120394
Appears in Collections:Staff Publications

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