Please use this identifier to cite or link to this item:
|Title:||Surface layer in relaxor ferroelectric PZN- 4.5%PT single crystals||Authors:||Chang, W.S.
|Issue Date:||2007||Citation:||Chang, W.S., Shanthi, M., Rajan, K.K., Lim, L.C., Wang, F.T., Tseng, C.T., Tu, C.S., Yang, P., Moser, H.O. (2007). Surface layer in relaxor ferroelectric PZN- 4.5%PT single crystals. Journal of Applied Physics 101 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2749199||Abstract:||The origin of the extremely broad peak at the lower 2θ side of the main (002) rhombohedral x-ray peak in an unpoled (001)-cut Pb (Zn1/3 Nb2/3) 0.955 Ti0.045 O3 (PZN- 4.5%PT) single crystal has been examined. This peak, located at about 2θ∼43°-44°, was absent on fractured surfaces of the crystal but reappeared when the fractured surfaces were polished mechanically. High-resolution synchrotron x-ray mesh scans revealed that the as-polished surface was covered with a "deformed layer" of heavily stressed rhombohedral phase of monoclinic symmetry having its c axis lying perpendicular to the surface. This deformed phase can be structurally likened to one full of "incipient monoclinic nuclei/phases," which are microscopic in size and subject to intense compression in the plane of the surface. With a given polishing direction, this surface layer showed parallel domain patterns when viewed under the polarized light microscope. This surface layer could be largely eliminated by appropriate poling at 0.7-1.5 kV/mm at room temperature but became resistant to poling after annealing. © 2007 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/51529||ISSN:||00218979||DOI:||10.1063/1.2749199|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 23, 2021
WEB OF SCIENCETM
checked on Oct 15, 2021
checked on Oct 14, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.