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|Title:||Investigation of Ta film growth mechanisms and atomic structures on polymer and SiC amorphous substrates||Authors:||Yang, S.-W.
|Issue Date:||2006||Citation:||Yang, S.-W., Dai, L., Chen, X.-T., Wu, P., Tan, V.B.C. (2006). Investigation of Ta film growth mechanisms and atomic structures on polymer and SiC amorphous substrates. Applied Physics Letters 88 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2186511||Abstract:||Large scale ab initio molecular dynamics simulations were undertaken to study the entire process of sputtering deposition of Ta atoms and Ta film formation on two different substrates, a low-k polymer and amorphous SiC. The calculation results gave insights into the Ta film growth mechanisms and their atomic ordering configurations on these substrates. Their effectiveness in blocking Cu diffusion was also investigated. Reasons for experimental observations of poor and good diffusion-barrier performances of Ta-polymer and Ta-SiC dielectric systems, respectively, were revealed from the simulations. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/51443||ISSN:||00036951||DOI:||10.1063/1.2186511|
|Appears in Collections:||Staff Publications|
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