1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/51275
DC FieldValue
dc.titleX-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD
dc.contributor.authorChang, W.
dc.contributor.authorLin, J.
dc.contributor.authorZhou, W.
dc.contributor.authorChua, S.J.
dc.contributor.authorLiu, Y.J.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-04-24T08:38:25Z
dc.date.available2014-04-24T08:38:25Z
dc.date.issued2001
dc.identifier.citationChang, W.,Lin, J.,Zhou, W.,Chua, S.J.,Liu, Y.J.,Wee, A.T.S. (2001). X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 624-625. ScholarBank@NUS Repository.
dc.identifier.issn10928081
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51275
dc.description.abstractThe growth of InGaAsN films using metallorganic chemical vapor deposition (MOCVD) was analyzed using X-ray photoelectron spectroscopy (XPS). XPS was used to study the dependence of chemical states of the constitutional elements on growth conditions and post-annealing. The results show that the addition of N atoms increases the atomic ratio of both Ga:As and In:Ga which produces InN+GaAs configuration in InGaAsN quaternary alloy.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
dc.description.volume2
dc.description.page624-625
dc.description.codenCPLSE
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.