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|Title:||X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD||Authors:||Chang, W.
|Issue Date:||2001||Citation:||Chang, W.,Lin, J.,Zhou, W.,Chua, S.J.,Liu, Y.J.,Wee, A.T.S. (2001). X-ray photoelectron spectroscopic study of InGaAsN grown by MOCVD. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2 : 624-625. ScholarBank@NUS Repository.||Abstract:||The growth of InGaAsN films using metallorganic chemical vapor deposition (MOCVD) was analyzed using X-ray photoelectron spectroscopy (XPS). XPS was used to study the dependence of chemical states of the constitutional elements on growth conditions and post-annealing. The results show that the addition of N atoms increases the atomic ratio of both Ga:As and In:Ga which produces InN+GaAs configuration in InGaAsN quaternary alloy.||Source Title:||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS||URI:||http://scholarbank.nus.edu.sg/handle/10635/51275||ISSN:||10928081|
|Appears in Collections:||Staff Publications|
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