Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1555373
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dc.titleTwo-band model of spin-polarized tunneling incorporating discrete charging energy
dc.contributor.authorWang, X.
dc.contributor.authorJalil, M.B.A.
dc.date.accessioned2014-04-24T08:38:14Z
dc.date.available2014-04-24T08:38:14Z
dc.date.issued2003-05-15
dc.identifier.citationWang, X., Jalil, M.B.A. (2003-05-15). Two-band model of spin-polarized tunneling incorporating discrete charging energy. Journal of Applied Physics 93 (10 3) : 8056-8058. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555373
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51269
dc.description.abstractThe discrete charging energy was incorporated into the Hamiltonian model to explain tunneling transport across a double-junction system. Quantum mechanical transfer matrix method was considered to evaluate the transmission coefficients and current across the double barrier. A bias-dependent tunneling magnetoresistance with a peak value exceeding 35% was obtained.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1555373
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1555373
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue10 3
dc.description.page8056-8058
dc.description.codenJAPIA
dc.identifier.isiut000182822600139
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