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|Title:||Two-band model of spin-polarized tunneling incorporating discrete charging energy||Authors:||Wang, X.
|Issue Date:||15-May-2003||Citation:||Wang, X., Jalil, M.B.A. (2003-05-15). Two-band model of spin-polarized tunneling incorporating discrete charging energy. Journal of Applied Physics 93 (10 3) : 8056-8058. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1555373||Abstract:||The discrete charging energy was incorporated into the Hamiltonian model to explain tunneling transport across a double-junction system. Quantum mechanical transfer matrix method was considered to evaluate the transmission coefficients and current across the double barrier. A bias-dependent tunneling magnetoresistance with a peak value exceeding 35% was obtained.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/51269||ISSN:||00218979||DOI:||10.1063/1.1555373|
|Appears in Collections:||Staff Publications|
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