Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMAG.2008.2002374
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dc.titleSpin transport in a double magnetic tunnel junction quantum dot system with noncollinear magnetization
dc.contributor.authorMa, M.J.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.contributor.authorHan, G.C.
dc.date.accessioned2014-04-24T08:37:39Z
dc.date.available2014-04-24T08:37:39Z
dc.date.issued2008-11
dc.identifier.citationMa, M.J., Jalil, M.B.A., Tan, S.G., Han, G.C. (2008-11). Spin transport in a double magnetic tunnel junction quantum dot system with noncollinear magnetization. IEEE Transactions on Magnetics 44 (11 PART 2) : 2604-2607. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2008.2002374
dc.identifier.issn00189464
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51249
dc.description.abstractA model is proposed to study the spin dependent transport of a quantum dot coupled to two noncollinear ferromagnetic leads configuration, in the sequential tunneling regime. The angular deviation (θ) and lead polarization (p) dependence of the tunneling current and tunneling magnetoresistance (TMR) are investigated for both singly occupied and doubly occupied dot, in the presence of spin flip effect. The current and TMR are found to be more sensitive to p and the spin flip rate in the singly-occupied bias regime. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMAG.2008.2002374
dc.sourceScopus
dc.subjectMagnetic tunnel junction
dc.subjectQuantum dot
dc.subjectSpin flip
dc.subjectTunnel magnetoresistance
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TMAG.2008.2002374
dc.description.sourcetitleIEEE Transactions on Magnetics
dc.description.volume44
dc.description.issue11 PART 2
dc.description.page2604-2607
dc.description.codenIEMGA
dc.identifier.isiut000262221200039
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