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|Title:||Low switching current in a modified exchange-biased spin valve via antiferromagnetic spin transfer torque||Authors:||Guo, J.
|Issue Date:||1-Apr-2011||Citation:||Guo, J., Jalil, M.B.A., Ghee, S. (2011-04-01). Low switching current in a modified exchange-biased spin valve via antiferromagnetic spin transfer torque. Journal of Applied Physics 109 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3559481||Abstract:||We analyze the current-induced spin transfer torque and magnetization reversal properties in an exchanged-biased spin valve (EBSV) structure FM2/NM/FM1/AFM, taking into consideration the exchange interaction between the ferromagnetic (FM) and the antiferromagnetic (AFM) layers. The passage of the spin current above a certain threshold value causes the magnetization to switch in some parts of the AFM layer. This in turn leads to a change in the magnitude and direction of the exchange-bias field, which can subsequently assist or hinder the magnetization switching of the adjacent FM layer and results in so-called inverse current-induced magnetization switching for a weakly-biased EBSV structure. The requisite critical current density to switch the AFM layer is theoretically found to be lower than that for the FM layer, which provides us a potential method to substantially reduce the critical current density for the spin transfer switching in EBSV-based devices. © 2011 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/51204||ISSN:||00218979||DOI:||10.1063/1.3559481|
|Appears in Collections:||Staff Publications|
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