Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2885019
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dc.titleSuppression of interference-induced reflectivity fluctuations in GaN-based semiconductor saturable absorber mirror
dc.contributor.authorLin, F.
dc.contributor.authorXiang, N.
dc.contributor.authorWang, X.C.
dc.contributor.authorArokiaraj, J.
dc.contributor.authorLiu, W.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-04-24T07:25:08Z
dc.date.available2014-04-24T07:25:08Z
dc.date.issued2008
dc.identifier.citationLin, F., Xiang, N., Wang, X.C., Arokiaraj, J., Liu, W., Chua, S.J. (2008). Suppression of interference-induced reflectivity fluctuations in GaN-based semiconductor saturable absorber mirror. Journal of the Electrochemical Society 155 (5) : H307-H313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2885019
dc.identifier.issn00134651
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/51053
dc.description.abstractSimulations and experiments were carried out to suppress the interference-induced reflectivity fluctuations in a nonmonolithically grown broad-band GaN-based semiconductor saturable absorber mirror (SESAM). Laser lift-off of the sapphire substrate, inductively coupled plasma etching of the GaN buffer, and plasma enhanced chemical vapor deposition of the antireflective coating were conducted according to the simulated optimization processes. The interference-induced reflectivity fluctuations were effectively reduced. Characterizations by atomic force microscopy, X-ray diffraction, scanning electron microscopy, and photoluminescence further indicated that the SESAM after the optimization processes exhibited a good surface morphology, crystal quality, and emission property. © 2008 The Electrochemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2885019
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1149/1.2885019
dc.description.sourcetitleJournal of the Electrochemical Society
dc.description.volume155
dc.description.issue5
dc.description.pageH307-H313
dc.description.codenJESOA
dc.identifier.isiut000254779700066
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