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Title: Sequential tunneling through a two-level semiconductor quantum dot system coupled to magnetic leads
Authors: Ma, M.J. 
Jalil, M.B.A. 
Tan, S.G. 
Issue Date: 2008
Citation: Ma, M.J., Jalil, M.B.A., Tan, S.G. (2008). Sequential tunneling through a two-level semiconductor quantum dot system coupled to magnetic leads. Journal of Applied Physics 104 (5) : -. ScholarBank@NUS Repository.
Abstract: Sequential transport through a semiconductor quantum dot (QD) weakly coupled to two collinear magnetic leads is analyzed theoretically based on the master equation method. The transport model considers two discrete energy levels in the dot, i.e., the lowest unoccupied e (electron) and the highest occupied h (hole) energy levels, with associated Coulomb correlation energies Ue and Uh, respectively, and the spin-flip effect within the dot. The charge and spin currents and the tunneling magnetoresistance are evaluated in the sequential tunneling regime. It was found that when both energy levels, e and h, contribute to the tunneling transport, there is enhancement of the current as well as tunneling magnetoresistance, compared to the case of a single-level QD transport considered previously. The tunneling transport through the two levels of the QD also results in additional bias-dependence: it was observed that spin accumulation and magnetoresistance of the system are particularly suppressed by spin flip within the bias range corresponding to single QD occupancy. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.2973672
Appears in Collections:Staff Publications

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