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dc.titleSelective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer
dc.contributor.authorLoh, T.H.
dc.contributor.authorNguyen, H.S.
dc.contributor.authorMurthy, R.
dc.contributor.authorYu, M.B.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorLo, G.Q.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.L.
dc.contributor.authorWang, J.
dc.contributor.authorLee, S.J.
dc.identifier.citationLoh, T.H., Nguyen, H.S., Murthy, R., Yu, M.B., Loh, W.Y., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Wang, J., Lee, S.J. (2007). Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer. Applied Physics Letters 91 (7) : -. ScholarBank@NUS Repository.
dc.description.abstractThe authors report the performance of selective epitaxial Ge (400 nm) on Si-on-insulator p-i-n mesa-type normal incidence photodiodes using ∼14 nm low-temperature Si0.8 Ge0.2 buffer without cyclic annealing. At -1 V, very low bulk dark current densities of 1.5-2 mA cm2 were obtained indicating good material quality, and the peripheral surface leakage current densities were 14-19.5 μAcm. For 28 μm diameter round photodiode, the highest achieved external quantum efficiencies at -5 V were 27%, 9%, and 2.9% for 850 nm, 1.3 μm, and 1.56 μm optical wavelengths, respectively. 15×15 μ m2 square photodiode has 3 dB bandwidth 15 GHz at -1 V. Good performance was achieved without high-temperature annealing, suggesting easy integration of GeSi photodiode unto existing complementary metal-oxide-semiconductor process. © 2007 American Institute of Physics.
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleApplied Physics Letters
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