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|Title:||Optical properties of InAsGaAs surface quantum dots||Authors:||Miao, Z.L.
|Issue Date:||17-Jan-2005||Citation:||Miao, Z.L., Zhang, Y.W., Chua, S.J., Chye, Y.H., Chen, P., Tripathy, S. (2005-01-17). Optical properties of InAsGaAs surface quantum dots. Applied Physics Letters 86 (3) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1854199||Abstract:||We report long-wavelength photoluminescence emission (∼1.6-1.7 μm) from self-organized InAs surface quantum dots (SQDs) grown on GaAs substrate without any capping layers. Photoluminescence (PL) properties of these quantum dots (QDs) are strongly affected by the surface states and strain relaxation mechanism. Compared to the case of capped InAs QDs, a large redshift of about 466 nm observed in the PL spectrum of SQDs can be attributed to the strain relaxation and the strong coupling of the confined states with the surface states. The PL properties of these SQDs can also be influenced by the presence of quasi-infinite surface potential. © 2005 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/51005||ISSN:||00036951||DOI:||10.1063/1.1854199|
|Appears in Collections:||Staff Publications|
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