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Title: Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements
Authors: Chim, W.K. 
Wong, K.M. 
Yeow, Y.T.
Hong, Y.D.
Lei, Y. 
Teo, L.W.
Choi, W.K. 
Keywords: Interface trap
Oxide quality
Scanning capacitance microscopy (SCM)
Semiconductor dopant extraction
Issue Date: Oct-2003
Citation: Chim, W.K., Wong, K.M., Yeow, Y.T., Hong, Y.D., Lei, Y., Teo, L.W., Choi, W.K. (2003-10). Monitoring Oxide Quality Using the Spread of the dC/dV Peak in Scanning Capacitance Microscopy Measurements. IEEE Electron Device Letters 24 (10) : 667-670. ScholarBank@NUS Repository.
Abstract: This article proposes a method for evaluating the quality of the overlying oxide on samples used in scanning capacitance microscopy (SCM) dopant profile extraction. The method can also be used generally as a convenient in-process method for monitoring oxide quality directly after the oxidation process without prior metallization of the oxide-semiconductor sample. The spread of the differential capacitance characteristic (dC/dV versus V plot), characterized using its full width at half maximum (FWHM), was found to be strongly dependent on the interface trap density as a consequence of the stretch-out effect of interface traps on the capacitance-voltage (C-V) curve. Results show that the FWHM of the dC/dV characteristic is a sensitive monitor of oxide quality (in terms of interface trap density) as it is not complicated by localized oxide charging effects as in the case of the SCM probe tip voltage corresponding to maximum dC/dV. The magnitude of the dC/dV peak, at any given surface potential, was also found to be independent of the interface traps and only dependent on the substrate dopant concentration, which makes SCM dopant profile extraction possible.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2003.817390
Appears in Collections:Staff Publications

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