Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1529084
DC Field | Value | |
---|---|---|
dc.title | Field-emission induced growth of nanowires | |
dc.contributor.author | Thong, J.T.L. | |
dc.contributor.author | Oon, C.H. | |
dc.contributor.author | Yeadon, M. | |
dc.contributor.author | Zhang, W.D. | |
dc.date.accessioned | 2014-04-24T07:21:23Z | |
dc.date.available | 2014-04-24T07:21:23Z | |
dc.date.issued | 2003-12-16 | |
dc.identifier.citation | Thong, J.T.L., Oon, C.H., Yeadon, M., Zhang, W.D. (2003-12-16). Field-emission induced growth of nanowires. Applied Physics Letters 81 (25) : 4823-4825. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1529084 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/50926 | |
dc.description.abstract | Field-emission induced growth of nanowires was discussed. The single nanowires were grown in the prescence of an organometallic precursor. It was found that it is possible to grow sub-20-nm nanowire system which depends on the choice of suitable precursors to ensure compatibility between the diameters of the grown nanowires. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1529084 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.1529084 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 81 | |
dc.description.issue | 25 | |
dc.description.page | 4823-4825 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000179731000047 | |
Appears in Collections: | Staff Publications |
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