Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1615840
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dc.titleEffect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure
dc.contributor.authorHo, V.
dc.contributor.authorTeo, L.W.
dc.contributor.authorChoi, W.K.
dc.contributor.authorChim, W.K.
dc.contributor.authorTay, M.S.
dc.contributor.authorAntoniadis, D.A.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorDu, A.Y.
dc.contributor.authorTung, C.H.
dc.contributor.authorLiu, R.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-04-24T07:20:51Z
dc.date.available2014-04-24T07:20:51Z
dc.date.issued2003-10-27
dc.identifier.citationHo, V., Teo, L.W., Choi, W.K., Chim, W.K., Tay, M.S., Antoniadis, D.A., Fitzgerald, E.A., Du, A.Y., Tung, C.H., Liu, R., Wee, A.T.S. (2003-10-27). Effect of germanium concentration and tunnel oxide thickness on nanocrystal formation and charge storage/retention characteristics of a trilayer memory structure. Applied Physics Letters 83 (17) : 3558-3560. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1615840
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50907
dc.description.abstractThe effect of rapid thermal oxide (RTO) layer thickness and germanium concentration on the nanocrystal formation and charge storage/retention capabilities of a trilayer memory structure was discussed. The results showed that the RTO and the capping oxide layers were not totally effective in confining the Ge nanocrystals in the middle layer when a pure Ge middle layer was used for the formation of nanocrystals. A diffusion of Ge atoms through the RTO and into the silicon substrate was observed with the help of transmission electron microscopy and secondary ion mass spectroscopy, when the RTO layer thickness was reduced to 2.5 nm.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1615840
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.1615840
dc.description.sourcetitleApplied Physics Letters
dc.description.volume83
dc.description.issue17
dc.description.page3558-3560
dc.description.codenAPPLA
dc.identifier.isiut000186068400038
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