Please use this identifier to cite or link to this item: https://doi.org/10.1021/la302262g
DC FieldValue
dc.titleDynamics of wicking in silicon nanopillars fabricated with interference lithography and metal-assisted chemical etching
dc.contributor.authorMai, T.T.
dc.contributor.authorLai, C.Q.
dc.contributor.authorZheng, H.
dc.contributor.authorBalasubramanian, K.
dc.contributor.authorLeong, K.C.
dc.contributor.authorLee, P.S.
dc.contributor.authorLee, C.
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-04-24T07:20:45Z
dc.date.available2014-04-24T07:20:45Z
dc.date.issued2012-08-07
dc.identifier.citationMai, T.T., Lai, C.Q., Zheng, H., Balasubramanian, K., Leong, K.C., Lee, P.S., Lee, C., Choi, W.K. (2012-08-07). Dynamics of wicking in silicon nanopillars fabricated with interference lithography and metal-assisted chemical etching. Langmuir 28 (31) : 11465-11471. ScholarBank@NUS Repository. https://doi.org/10.1021/la302262g
dc.identifier.issn07437463
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50904
dc.description.abstractThe capillary rise of liquid on a surface, or "wicking", has potential applications in biological and industrial processes such as drug delivery, oil recovery, and integrated circuit chip cooling. This paper presents a theoretical study on the dynamics of wicking on silicon nanopillars based on a balance between the driving capillary forces and viscous dissipation forces. Our model predicts that the invasion of the liquid front follows a diffusion process and strongly depends on the structural geometry. The model is validated against experimental observations of wicking in silicon nanopillars with different heights synthesized by interference lithography and metal-assisted chemical etching techniques. Excellent agreement between theoretical and experimental results, from both our samples and data published in the literature, was achieved. © 2012 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/la302262g
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1021/la302262g
dc.description.sourcetitleLangmuir
dc.description.volume28
dc.description.issue31
dc.description.page11465-11471
dc.description.codenLANGD
dc.identifier.isiut000307159300023
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