Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1518161
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dc.titleControl of magnetization reversal process with pinning layer in FePt thin films
dc.contributor.authorZhao, Z.L.
dc.contributor.authorWang, J.P.
dc.contributor.authorChen, J.S.
dc.contributor.authorDing, J.
dc.date.accessioned2014-04-24T07:20:08Z
dc.date.available2014-04-24T07:20:08Z
dc.date.issued2002-11-04
dc.identifier.citationZhao, Z.L., Wang, J.P., Chen, J.S., Ding, J. (2002-11-04). Control of magnetization reversal process with pinning layer in FePt thin films. Applied Physics Letters 81 (19) : 3612-3614. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1518161
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50881
dc.description.abstractThe magnetization reversal processes of in situ ordered FePt thin films prepared by magnetron sputtering have been studied. A kind of nonmagnetic Ru pinning layer inserted in the FePt magnetic layer was described to introduce controllable pinning sites. The magnetization reversal mechanism of FePt thin films was observed to shift from the typical domain-wall motion behavior to the nucleation mode with Ru pinning layer inserted. Coercivity enhancement was also observed with relative thinner Ru pinning layer inserted in the FePt film. © 2002 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1518161
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE
dc.description.doi10.1063/1.1518161
dc.description.sourcetitleApplied Physics Letters
dc.description.volume81
dc.description.issue19
dc.description.page3612-3614
dc.description.codenAPPLA
dc.identifier.isiut000178935200032
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