Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2924412
DC FieldValue
dc.titleAbsorption recovery time reduction in InGaN/GaN quantum well saturable absorbers
dc.contributor.authorLin, F.
dc.contributor.authorXiang, N.
dc.contributor.authorChua, S.J.
dc.contributor.authorIrshad, A.
dc.contributor.authorRoither, S.
dc.contributor.authorPugzlys, A.
dc.contributor.authorBaltuska, A.
dc.contributor.authorChen, P.
dc.contributor.authorChow, S.Y.
dc.date.accessioned2014-04-24T07:19:26Z
dc.date.available2014-04-24T07:19:26Z
dc.date.issued2008
dc.identifier.citationLin, F., Xiang, N., Chua, S.J., Irshad, A., Roither, S., Pugzlys, A., Baltuska, A., Chen, P., Chow, S.Y. (2008). Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers. Journal of Applied Physics 103 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2924412
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50857
dc.description.abstractIn this work, a simple method to reduce the absorption recovery time of the InGaN/GaN quantum well saturable absorber was demonstrated. The recovery time of the saturable absorber grown by metal organic chemical vapor deposition was effectively controlled by controlling the crystal quality. Transmission electron microscopy results showed that, for saturable absorbers with reduced GaN buffer thicknesses, increased dislocations were introduced into the quantum well regions. The degraded crystal quality would therefore cause an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption. In addition, with the as-grown thin GaN buffers, the severe interference-induced reflectivity fluctuations were successfully suppressed. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2924412
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1063/1.2924412
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume103
dc.description.issue10
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000256303800029
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