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Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.918254
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dc.titleExperimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
dc.contributor.authorGuan, H.
dc.contributor.authorCho, B.J.
dc.contributor.authorLi, M.F.
dc.contributor.authorXu, Z.
dc.contributor.authorHe, Y.D.
dc.contributor.authorDong, Z.
dc.date.accessioned2014-04-23T02:59:39Z
dc.date.available2014-04-23T02:59:39Z
dc.date.issued2001-05
dc.identifier.citationGuan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z. (2001-05). Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide. IEEE Transactions on Electron Devices 48 (5) : 1010-1013. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918254
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/50559
dc.description.abstractThe quasi-breakdown (QB) mechanism of thin gate oxide was investigated through observation of defects generation during stress. It has been found that the amount of interface traps reaches to the same critical value at the onset point of QB regardless of stress conditions, implying that QB in thin oxide is triggered by a critical amount of interface traps.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.918254
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/16.918254
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume48
dc.description.issue5
dc.description.page1010-1013
dc.description.codenIETDA
dc.identifier.isiut000168361000029
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