InGaAs N-MOSFETS with CMOS Compatible Source/Drain Technology and the Integration on Si Platform

Abstract

InGaAs is an attractive candidate as n-channel material for future high-performance complementary metal-oxide-semiconductor (CMOS) applications. Key challenges related to the lack of source/drain (S/D) contact technology compatible to Si CMOS and heterogeneous integration of InGaAs transistors on Si have to be overcome in order to take full advantage of its high mobility benefit. This thesis explored self-aligned metallization of InGaAs analogous to silicidation for InGaAs n-MOSFETs. Co and Ni reactions with InGaAs for M-InGaAs (M = Co or Ni) ohmic contact formation were investigated. InGaAs n-MOSFETs with self-aligned M-InGaAs S/D were demonstrated. The transistors exhibit excellent drive current. The integration of InGaAs n-MOSFETs on Si substrate was also successfully realized. The InGaAs n-MOSFETs on Si substrate have intrinsic transconductance that compares very well with other state-of-the-art InGaAs transistors. In addition, key achievements towards realizing the co-integration of InGaAs-based transistors and lasers on common Si platform were presented.