Investigation of Thickness and Orientation Effects on the III-V DG-UTB FET: A Simulation Approach

Abstract

III-Vs with their improved transport properties, along with novel double-gate ultra-thin-body (DG-UTB) design, could effectively enhance the performance of the nanoscale MOS devices. In this work, we adopt the sp3d5s* tight-binding model and top-of-barrier model to study the orientation and body thickness effects on the III-V DG-UTB device performance. The work consists of two parts: (1) the III-V comparisons of ballistic transport in different transport direction/surface orientation and voltage scaling of CMOS based on ITRS standard; (2) the body thickness effect on the GaSb UTB device performance and the analysis of electrostatics of UTB with different thickness.