Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/48324
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dc.titlePerpendicular Magnetic Anisotropy Materials for Spintronics Applications
dc.contributor.authorHO PIN
dc.date.accessioned2013-11-30T18:00:51Z
dc.date.available2013-11-30T18:00:51Z
dc.date.issued2013-08-02
dc.identifier.citationHO PIN (2013-08-02). Perpendicular Magnetic Anisotropy Materials for Spintronics Applications. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/48324
dc.description.abstractFerromagnetic materials with large perpendicular magnetic anisotropy (PMA) are investigated for spin transfer torque magnetic random access memory (STT-MRAM) elements, as they fulfill thermal stability at low dimensions and lower the critical current density for STT switching. L10-FePt is a potential candidate for such perpendicular systems due to its high magnetocrystalline anisotropy. This thesis revolves around the study of high PMA L10-FePt in pseudo spin valves (PSVs). Different spacer materials, Ag and TiN, were used. The PSV with Ag spacer displayed an improved giant magnetoresistance of 1.1 % compared to the Au, Pt and Pd spacer reported earlier. The use of TiN spacer mitigated the interlayer diffusion issue as TiN was chemically stable towards FePt and was also a good diffusion barrier. The thesis also further demonstrated PSVs consisting of ultra-thin L10-FePt free layer of thickness less than 4 nm, which was desirable for reducing the STT critical current density.
dc.language.isoen
dc.subjectL10-FePt, perpendicular magnetic anisotropy, psuedo spin valve, GMR, magnetoresistance, spintronics
dc.typeThesis
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.supervisorCHEN JINGSHENG
dc.contributor.supervisorCHOW GAN-MOOG
dc.contributor.supervisorHAN GUCHANG
dc.description.degreePh.D
dc.description.degreeconferredDOCTOR OF PHILOSOPHY
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Ph.D Theses (Open)

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