Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/37553
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dc.titleElectronic transport of graphene devices
dc.contributor.authorSHIN YOUNG JUN
dc.date.accessioned2013-04-30T18:00:36Z
dc.date.available2013-04-30T18:00:36Z
dc.date.issued2012-12-19
dc.identifier.citationSHIN YOUNG JUN (2012-12-19). Electronic transport of graphene devices. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/37553
dc.description.abstractThis thesis represents mainly investigations of electronic transport of graphene devices. First of all, the surface property of graphene has been studied in order to make better contacts between graphene and metal. Electrical properties of graphene are investigated. Reproducible current hysteresis is observed when high voltage bias is swept in the graphene channel. Capacitance ? gate voltage measurements on top gated bilayer graphene indicate that the origin of hysteresis in the channel resistance is due to charge traps present at the graphene/Al2O3 interface with a charging and discharging time constant of ~100 ?s. The tunneling characteristic of graphene from the two-terminal devices after the breakdown is studied. Stochastic transitions between an ohmic like state and an insulator like state in graphene devices are studied.
dc.language.isoen
dc.subjectgraphene, transport, surface , stochastic, tunneling, ambipolar
dc.typeThesis
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.supervisorYANG HYUNSOO
dc.contributor.supervisorBHATIA, CHARANJIT SINGH
dc.description.degreePh.D
dc.description.degreeconferredDOCTOR OF PHILOSOPHY
dc.identifier.isiutNOT_IN_WOS
Appears in Collections:Ph.D Theses (Open)

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