Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/34978
Title: Graphene Memory Cell and Fabrication Methods Thereof
Authors: OEZYILMAZ BARBAROS 
ZHENG YI 
NI GUANG XIN 
TOH CHEE TAT 
Issue Date: 14-Jul-2011
Citation: OEZYILMAZ BARBAROS,ZHENG YI,NI GUANG XIN,TOH CHEE TAT (2011-07-14). Graphene Memory Cell and Fabrication Methods Thereof. ScholarBank@NUS Repository.
Abstract: The disclosed memory cell (10) comprises a graphene layer (16) having controllable resistance states representing data values of the memory cell (10) In one exemplary embodiment a non-volatile memory is provided by having a ferroelectric layer (18) control the resistance states. In the exemplary embodiment, binary `0`s and `1`s are respectively represented by low and high resistance states of the graphene layer (16), and these states are switched in a non-volatile manner by the polarization directions of the ferroelectric layer (18).
URI: http://scholarbank.nus.edu.sg/handle/10635/34978
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