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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/34927
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dc.titleP-type transparent copper-aluminum-oxide semiconductor
dc.contributorNATIONAL UNIVERSITY OF SINGAPORE
dc.contributor.authorGONG, HAO
dc.contributor.authorWANG, YUE
dc.contributor.authorHUANG, LEI
dc.date.accessioned2012-10-08T08:22:50Z
dc.date.available2012-10-08T08:22:50Z
dc.date.issued2003-03-27
dc.identifier.citationGONG, HAO,WANG, YUE,HUANG, LEI (2003-03-27). P-type transparent copper-aluminum-oxide semiconductor. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/34927
dc.description.abstractThis invention provides a transparent Cu--Al--O semi-conducting film having a p-type conductivity greater than 0.95.times.10.sup.-1 S.multidot.cm.sup.-1. This invention also relates to a process for preparing a Cu--Al--O film having p-type conductivity, comprising: a) controllably vaporizing organo-copper and organo-aluminum precursors and carrying the vapors into a chemical vapor deposition chamber with an inert gas flow; b)reacting and depositing the vapors on a substrate, preferably a light-transmitting substrate, through a chemical vapor deposition process.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US20030057495A1
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentCHEMICAL AND PROCESS ENGINEERING CENTRE
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoUS20030057495A1
dc.description.patenttypePublished Application
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