Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/32694
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dc.titleForming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
dc.contributor.authorCHUA, SOO JIN
dc.contributor.authorLI, PENG
dc.contributor.authorHAO, MAOSHENG
dc.contributor.authorZHANG, JI
dc.date.accessioned2012-05-02T02:28:59Z
dc.date.available2012-05-02T02:28:59Z
dc.date.issued2005-03-01
dc.identifier.citationCHUA, SOO JIN,LI, PENG,HAO, MAOSHENG,ZHANG, JI (2005-03-01). Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD). ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/32694
dc.description.abstractIndium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple In.sub.x Ga.sub.1-x N/In.sub.y Ga.sub.1-y N quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US6861271
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentCOMPUTER SCIENCE
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoUS6861271
dc.description.patenttypeGranted Patent
dc.contributor.patentassigneeTHE NATIONAL UNIVERSITY OF SINGAPORE (SINGAPORE, SG)
dc.contributor.patentassigneeINSTITUTE OF MATERIALS RESEARCH & ENGINEERING
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