P-type transparent copper-aluminum-oxide semiconductor

Abstract

This invention provides a transparent Cu--Al--O semi-conducting film having a p-type conductivity greater than 0.95.times.10.sup.-1 S.multidot.cm.sup.-1. This invention also relates to a process for preparing a Cu--Al--O film having p-type conductivity, comprising: a) controllably vaporizing organo-copper and organo-aluminum precursors and carrying the vapors into a chemical vapor deposition chamber with an inert gas flow; b)reacting and depositing the vapors on a substrate, preferably a light-transmitting substrate, through a chemical vapor deposition process.