Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/32632
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dc.titleMethod for low temperature lamination of metals to polyimides
dc.contributor.authorKANG, EN-TANG
dc.contributor.authorANG, ARTHUR KHOON SIAH
dc.contributor.authorNEOH, KOON GEE
dc.contributor.authorCUI, CHENG QIANG
dc.contributor.authorLIM, THIAM BENG
dc.date.accessioned2012-05-02T02:28:04Z
dc.date.available2012-05-02T02:28:04Z
dc.date.issued2003-03-25
dc.identifier.citationKANG, EN-TANG,ANG, ARTHUR KHOON SIAH,NEOH, KOON GEE,CUI, CHENG QIANG,LIM, THIAM BENG (2003-03-25). Method for low temperature lamination of metals to polyimides. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/32632
dc.description.abstractThe present invention is directed to a method for the lamination of metals, and especially copper, to the surface of polyimides and derivatives of polyimides at temperatures substantially below the curing temperature of the imide polymers. More specifically, the invention is directed to a method for surface modification of polyimides and derivatives of polyimides by thermal graft copolymerization and interfacial polymerization with concurrent lamination of the metal of interest in the presence of an appropriate functional monomer. The process can be carried out under atmospheric conditions and either in the presence or the complete absence of an added polymerization initiator. The so laminated polyimide-metal interfaces exhibit T-peel adhesion strengths in excess of 16 N/cm. The adhesion strength also exceeds the fracture strength of polyimide films with a thickness of 75 .mu.m.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US6537411
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentCHEMICAL & ENVIRONMENTAL ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoUS6537411
dc.description.patenttypeGranted Patent
dc.contributor.patentassigneeTHE NATIONAL UNIVERSITY OF SINGAPORE (SINGAPORE, SG)
dc.contributor.patentassigneeINSTITUTE OF MICROELECTRONICS
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