Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/32597
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dc.titleMethod to form uniform silicide features
dc.contributor.authorCHAN, LAP
dc.contributor.authorHO, CHAW SING
dc.contributor.authorLI, FONG YAU SAM
dc.contributor.authorNG, HOU TEE
dc.date.accessioned2012-05-02T02:27:34Z
dc.date.available2012-05-02T02:27:34Z
dc.date.issued2001-08-28
dc.identifier.citationCHAN, LAP,HO, CHAW SING,LI, FONG YAU SAM,NG, HOU TEE (2001-08-28). Method to form uniform silicide features. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/32597
dc.description.abstractA method for forming uniform ultrathin silicide features in the fabrication of an integrated circuit is described. A metal layer is deposited over the surface of a silicon semiconductor substrate. An array of heated metallic tips contact the metal layer whereby the metal layer is transformed to a metal silicide where it is contacted by the metallic tips and wherein the metal layer not contacted by the metallic tips is unreacted. The unreacted metal layer is removed leaving the metal silicide as uniform ultrathin silicide features. Alternatively, a metal acetate layer is spin-coated over the surface of a silicon semiconductor substrate. An array of heated metallic tips contacts the metal acetate layer whereby the metal acetate layer is transformed to a metal silicide where the metallic tips contact the metal acetate layer and wherein the metal acetate slayer not contacted by the metallic tips is unreacted. Or the metal acetate layer is heat treated at localized regions using a multi-array of tips aligned in a specific layout. Or the metal acetate layer is contacted by heated metallic tips under vacuum so that the metal does not oxidize. The unreacted metal acetate layer is removed leaving the metal silicide as the uniform ultrathin silicide features.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/http://analytics.patsnap.com/patent_view/view?pn=US6281117
dc.sourcePatSnap
dc.typePatent
dc.contributor.departmentCHEMISTRY
dc.identifier.isiutNOT_IN_WOS
dc.description.patentnoUS6281117
dc.description.patenttypeGranted Patent
dc.contributor.patentassigneeCHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SINGAPORE, SG)
dc.contributor.patentassigneeNATIONAL UNIVERSITY OF SINGAPORE
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