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https://scholarbank.nus.edu.sg/handle/10635/28155
DC Field | Value | |
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dc.title | Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions | |
dc.contributor.author | LIOW TSUNG-YANG | |
dc.date.accessioned | 2011-11-08T18:00:56Z | |
dc.date.available | 2011-11-08T18:00:56Z | |
dc.date.issued | 2008-09-30 | |
dc.identifier.citation | LIOW TSUNG-YANG (2008-09-30). Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions. ScholarBank@NUS Repository. | |
dc.identifier.uri | https://scholarbank.nus.edu.sg/handle/10635/28155 | |
dc.description.abstract | High performance multiple-gate transistors such as FinFETs are likely to be required beyond the 32 nm technology node. Process-induced strain techniques can significantly enhance the carrier mobility in the channels of such transistors. In this dissertation work, complementary lattice mismatched source and drain stressors are studied for both n and p-channel multiple-gate transistors. Si1-yCy (or SiC), which has a lattice constant smaller than that of Si, is employed to induce uniaxial tensile strain in the channel regions of n-channel devices. Si1-xGex (or SiGe), which has a lattice constant larger than that of Si, is employed to induce uniaxial compressive strain in the channel regions of p-channel devices. | |
dc.language.iso | en | |
dc.subject | strain, finfet, mugfet, silicon-germanium, silicon-carbon | |
dc.type | Thesis | |
dc.contributor.department | NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG | |
dc.description.degree | Ph.D | |
dc.description.degreeconferred | DOCTOR OF PHILOSOPHY | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Ph.D Theses (Open) |
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LiowTsungYang.pdf | 5.18 MB | Adobe PDF | OPEN | None | View/Download |
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