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dc.titleStructural, optical and electrical properties of Cu-In-O thin films prepared by plasma-enhanced CVD
dc.contributor.authorHAO YONGLIANG
dc.identifier.citationHAO YONGLIANG (2008-03-26). Structural, optical and electrical properties of Cu-In-O thin films prepared by plasma-enhanced CVD. ScholarBank@NUS Repository.
dc.description.abstractCopper indium oxide (Cu-In-O) thin films were prepared by PE-CVD using Cu(acac)2 and In(acac)3 precursors with In/Cu atomic ratio of 1 for the first time. The structural, optical and electrical properties of the films prepared at different temperatures and growth conditions were investigated. A structural evolution of the films from amorphous state to nano-grain sized phases was found when the substrate temperature was increased from 400 to 700 C, and a band structure variation was also observed. An established working hypothesis of double transition metal (TM) oxides could explain the evolution. It is also interesting to find that the band gap can be controlled to vary in a wide range (1.30-1.65eV) by changing indium concentration in the films, and p-type conducting indium incorporated/doped copper oxide was achieved in an In/Cu atomic ratio range of 0.06-0.15, rather than at a zero In/Cu ratio.
dc.subjectCopper indium oxide, CuO:In, Optical property, Electrical property, PE-CVD
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.supervisorGONG HAO
dc.description.degreeconferredMASTER OF SCIENCE
Appears in Collections:Master's Theses (Open)

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