Please use this identifier to cite or link to this item: https://doi.org/10.1063/5.0176508
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dc.titleEvidences of thermoelectrically driven unidirectional magnetoresistance from a single Weyl ferromagnet Co2MnGa
dc.contributor.authorBin Rong
dc.contributor.authorLizhu Ren
dc.contributor.authorYizhe Liu
dc.contributor.authorBo Sun
dc.contributor.authorJiaxin Chen
dc.contributor.authorKie Leong Teo
dc.contributor.authorLiang Liu
dc.contributor.authorYumeng Yang
dc.contributor.editorLIZHU, Ren
dc.date.accessioned2024-07-07T08:07:48Z
dc.date.available2024-07-07T08:07:48Z
dc.date.issued2023-12-19
dc.identifier.citationBin Rong, Lizhu Ren, Yizhe Liu, Bo Sun, Jiaxin Chen, Kie Leong Teo, Liang Liu, Yumeng Yang (2023-12-19). Evidences of thermoelectrically driven unidirectional magnetoresistance from a single Weyl ferromagnet Co2MnGa. APL Materials 11 (12). ScholarBank@NUS Repository. https://doi.org/10.1063/5.0176508
dc.identifier.issn2166532X
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/249111
dc.description.abstractWeyl ferromagnets, with large anomalous Hall (and Nernst) effects, are an ideal playground to study unconventional transport phenomena. Here, we report a sizable unidirectional magnetoresistance with a ratio of up to 7.73 × 10 −5 per current density of 1 MA cm−2 in single-layer epitaxial Co2MnGa fflms. Surprisingly, the nonlinear signal has an isotropic crystallographic axis dependence and scales almost linearly with the fflm thickness. Both features cannot be explained by the spin transport from an intrinsic band structure, but rather agree with the current induced transverse thermoelectric effect. By employing a 1D heat transfer model to account for the temperature gradient, we derived an analytical expression of this thermoelectrically driven unidirectional magnetoresistance, from which a upper bound of transverse thermopower Sxy = 3.70 ± 1.10 μV K−1 can be obtained. Our work provides direct evidences of thermoelectric voltages in the nonlinear transport signals that may be extended to other material systems as well.
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1063/5.0176508
dc.description.sourcetitleAPL Materials
dc.description.volume11
dc.description.issue12
dc.published.statePublished
dc.grant.idA18A6b0057
dc.grant.fundingagencyA*STAR grant
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