Please use this identifier to cite or link to this item: https://doi.org/10.1063/5.0201711
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dc.titleEngineering the topological states of Weyl ferromagnetic CoxMnGay films grown by molecular beam epitaxy
dc.contributor.authorLizhu Ren
dc.contributor.authorZhao, Tieyang
dc.contributor.authorChen, Jingsheng
dc.contributor.authorTeo, Kie Leong
dc.contributor.editorLIZHU, Ren
dc.date.accessioned2024-07-07T03:51:33Z
dc.date.available2024-07-07T03:51:33Z
dc.date.issued2024-04-25
dc.identifier.citationLizhu Ren, Zhao, Tieyang, Chen, Jingsheng, Teo, Kie Leong (2024-04-25). Engineering the topological states of Weyl ferromagnetic CoxMnGay films grown by molecular beam epitaxy. Applied Physics Letters 124 (17). ScholarBank@NUS Repository. https://doi.org/10.1063/5.0201711
dc.identifier.issn00036951
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/249110
dc.description.abstractDue to its nontrivial topological state, a magnetic Weyl semimetal often exhibits exotic transport properties that are important for both fundamental physics and potential spintronics applications. In this Letter, we investigate the composition dependences of the structural order, magnetism, and transport properties for the epitaxial Heusler alloy CoxMnGay (CMG) topological Weyl semimetal films grown via molecular beam epitaxy. Our results show that the saturated magnetization, anomalous Hall conductivity, and anomalous Hall angle of CMG are influenced by its composition and structural order. Specifically, we observed that the optimized L21–Co2MnGa alloy exhibits a high intrinsic anomalous Hall conductivity of approximately 913 X 1 cm 1 at its maximum, which is attributed to the substantial Berry curvature within its electronic band structures. This study provides valuable insights into how to engineer the topological ferromagnetic state of the Weyl semimetals for future applications.
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1063/5.0201711
dc.description.sourcetitleApplied Physics Letters
dc.description.volume124
dc.description.issue17
dc.published.statePublished
dc.grant.idA18A6b0057
dc.grant.fundingagencyA*STAR grant
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