Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/249107
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dc.titleEfffcient Spin−Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer
dc.contributor.authorLizhu Ren
dc.contributor.authorChenghang Zhou
dc.contributor.authorXiaohe Song
dc.contributor.authorHerng Tun Seng
dc.contributor.authorLiang Liu
dc.contributor.authorChaojiang Li
dc.contributor.authorTieyang Zhao
dc.contributor.authorZhenyi Zheng
dc.contributor.authorJun Ding
dc.contributor.authorYuan Ping Feng
dc.contributor.authorJingsheng Chen
dc.contributor.authorKie Leong Teo
dc.contributor.editorLIZHU, Ren
dc.date.accessioned2024-07-07T03:25:37Z
dc.date.available2024-07-07T03:25:37Z
dc.date.issued2023-03-21
dc.identifier.citationLizhu Ren, Chenghang Zhou, Xiaohe Song, Herng Tun Seng, Liang Liu, Chaojiang Li, Tieyang Zhao, Zhenyi Zheng, Jun Ding, Yuan Ping Feng, Jingsheng Chen, Kie Leong Teo (2023-03-21). Efffcient Spin−Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer. ACS Nano 17 (7) : 6400-6409. ScholarBank@NUS Repository.
dc.identifier.issn19360851
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/249107
dc.description.abstractElectrically manipulating magnetic moments by spin−orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy MnxPtyGe (MPG) fflms with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 1010Am−2, as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the fflms after sample annealing. The SOT effective ffelds of the samples are analyzed systematically. It is found that the SOT efffciency increases with the fflm thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic ffeld-free switching of magnetization is observed when the electric current ffows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efffcient magnetoresistive random access memory devices and other spintronic applications.
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.subjectmagnetic single layer, Heusler alloy, perpendicularly magnetized anisotropy, bulk spin−orbit torque, current-induced magnetization switching, ffeld-free SOT switching
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.sourcetitleACS Nano
dc.description.volume17
dc.description.issue7
dc.description.page6400-6409
dc.published.statePublished
dc.grant.idA18A6b0057
dc.grant.fundingagencyA*STAR grant
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