HOLE-DOPED INJECTION LAYER AND ACTIVE SEMICONDUCTOR LAYER FOR ORGANIC PHOTODETECTOR DEVICE

Abstract

Understanding the charge transport properties within the active layer of organic semiconductor and in doped semiconductor as injection layer is important for high performance organic devices. In this presentation, we report on the design, synthesis and characterization of PEDT:PSSH conducting polymer. We achieved improved charge transport and injection properties compared to commercially-available PEDT:PSSH. We also designed, synthesised and characterized the hole injection properties of self-compensated hole-doped semiconductor polymer based on triphenylamine-alt-fluorene (TAF) copolymers, with different solubilizing side chain length, tethered with pentafluoroethanesulfonylimidosulfonyl anion, and with planarized TAF core. The systematic study extended the understandings of factors influencing hole injection capabilities in these materials. Finally, we report a novel shortwave infrared non-fullerene acceptor based on a central donor core of 2,7-dihydro-4,4,9,9-tetrakis(4-octylphenyl)-4,9-di-hydro-s-indaceno[1,2-b:5,6- b′]dithiophene (IDT), flanked by both benzobis(thiadiazole) (BBT) and 2-(5,6-difluoro-3-oxo-2,3-dihydro-1H-inden-1-ylidene) malononitrile (IC2F) unit. We achieved low dark current and high detectivity organic photodetector performance with PBDB-T donor polymer.