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Title: | DIELECTRIC ENGINEERING FOR TWO DIMENSIONAL MATERIALS TOWARDS FUNCTIONAL AND RECONFIGURABLE DEVICES | Authors: | JIN TENGYU | ORCID iD: | orcid.org/0000-0001-9579-6627 | Keywords: | two-dimensional materials, dielectric engineering, reconfigurable device, native oxidation, nonvolatile memory, artificial synapse | Issue Date: | 11-Jan-2023 | Citation: | JIN TENGYU (2023-01-11). DIELECTRIC ENGINEERING FOR TWO DIMENSIONAL MATERIALS TOWARDS FUNCTIONAL AND RECONFIGURABLE DEVICES. ScholarBank@NUS Repository. | Abstract: | Two-dimensional materials with favorable properties have great potential in making new breakthrough in electronics. Dielectric engineering for a better integration of high-κ gate dielectrics with 2D semiconducting channel materials is essential for high-performance and low-power functional devices. However, recently reported 2D devices usually rely on deposited or transferred insulators as the dielectric layer, resulting in various challenges in device compatibility and fabrication complexity. On the other hand, developing reconfigurable devices with customized functionalities to realize the functional diversification of electronic systems is the other important trend of next-generation electronics. In this thesis, we investigated a controllable and reliable dielectric engineering strategy to fabricate dielectrics that are compatible with 2D semiconductors. Based on the native oxide, we developed a localized electrostatic doping strategy that can program the 2D devices into different lateral homojunctions to achieve reconfigurable functionalities. Both underlying switching mechanism and electronic/optoelectronic applications were further discussed. | URI: | https://scholarbank.nus.edu.sg/handle/10635/241487 |
Appears in Collections: | Ph.D Theses (Open) |
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