MOLECULAR BEAM EPITAXY OF 2D AND 1D METAL CHALCOGENIDES

Abstract

2D and 1D van der Waals metal chalcogenides (VMC) exhibit unique quantum properties never observed before in classical materials. The growth of continuous 2D large-area film using chemical vapor deposition has been difficult due to the lack of uniform control. For the synthesis of 1D-VMC, it is largely unexplored. In this dissertation, the molecular beam epitaxy of continuous and uniform nanofilms of 2D-MoSe2 and 2D-In2Se3 are studied, in which the former attains high crystallinity and electron mobility of ~15 cm2/Vs in ultrathin field-effect transistor, and the latter is grown using low temperature and exhibits of giant electroresistance ratio of >10^6, which is never observed before in ferroresistive diode junction, for 2D memory application. A new approach in growing 1D-MoSe2 is also investigated, in which the nanoribbon width is highly tunable via the growth parameters. This dissertation presents insights on the MBE of 2D- and 1D-VMC for the advancement of next-generation applications.