Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/235001
Title: HfOx BASED RRAM ENDURANCE IMPROVEMENT WITH OXYGEN PLASMA TREATMENT
Authors: YAN JIANGHU
ORCID iD:   orcid.org/0000-0002-4375-7025
Keywords: HfOx, RRAM, reliability, endurance, window margin, oxygen plasma, neuromorphic computing
Issue Date: 26-Jul-2022
Citation: YAN JIANGHU (2022-07-26). HfOx BASED RRAM ENDURANCE IMPROVEMENT WITH OXYGEN PLASMA TREATMENT. ScholarBank@NUS Repository.
Abstract: The motivation of this thesis is to find an approach to improve the RRAM reliability and explore a novel way to understand the reliability degradation. We focused on a systematic study to address the poor window margin and endurance. Firstly, introduced the fabrication of a HfOx based RRAM device and explored oxygen plasma treatment time splits e.g., 1min, 3min, 5min. Then used Keysight B1500 to characterize the RRAM reliability. Finally, observed all experimental splits show a lower forming voltage and better endurance, whereas the 3min split exhibits the best endurance. To understand the mechanism of the lower forming voltage and better endurance, we performed XPS and C-AFM, which reveals a competition model between oxygen vacancies generation and oxygen ion generation by the oxygen plasma treatment. This study sheds a light for a further improvement of RRAM performance and delivering a RRAM application in neuromorphic computing in future.
URI: https://scholarbank.nus.edu.sg/handle/10635/235001
Appears in Collections:Master's Theses (Open)

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