HfOx BASED RRAM ENDURANCE IMPROVEMENT WITH OXYGEN PLASMA TREATMENT

Abstract

The motivation of this thesis is to find an approach to improve the RRAM reliability and explore a novel way to understand the reliability degradation. We focused on a systematic study to address the poor window margin and endurance. Firstly, introduced the fabrication of a HfOx based RRAM device and explored oxygen plasma treatment time splits e.g., 1min, 3min, 5min. Then used Keysight B1500 to characterize the RRAM reliability. Finally, observed all experimental splits show a lower forming voltage and better endurance, whereas the 3min split exhibits the best endurance. To understand the mechanism of the lower forming voltage and better endurance, we performed XPS and C-AFM, which reveals a competition model between oxygen vacancies generation and oxygen ion generation by the oxygen plasma treatment. This study sheds a light for a further improvement of RRAM performance and delivering a RRAM application in neuromorphic computing in future.