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Title: Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers
Authors: Tan, Kian Hua
Loke, Wan Khai
Wicaksono, Satrio 
Yoon, Soon Fatt
Issue Date: 1-Apr-2021
Publisher: American Institute of Physics Inc.
Citation: Tan, Kian Hua, Loke, Wan Khai, Wicaksono, Satrio, Yoon, Soon Fatt (2021-04-01). Growth of InAs0.32Sb0.68on GaAs using a thin GaInSb buffer and strain superlattice layers. AIP Advances 11 (4) : 045203. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: We report on the growth of an InAs0.32Sb0.68 layer on (001) GaAs substrates. The lattice mismatch strain between the InAs0.32Sb0.68 layer and the GaAs substrate was accommodated using a thin 50-100 nm Ga0.35In0.65Sb buffer with interfacial misfit (IMF) dislocations. The epitaxial structures were characterized using transmission electron microscopy and x-ray diffraction analysis. The threading dislocation density in the InAs0.32Sb0.68 layer was reduced successfully to ?1 × 108 cm-2 using the combination of a Ga0.35In0.65Sb IMF buffer and InSb/Ga0.35In0.65Sb superlattice layers. Compared to GaSb/GaAs and InSb/GaAs interfaces, a significantly higher threading dislocation density (>1011 cm-2) was observed at the Ga0.35In0.65Sb/GaAs interface. Detailed analysis suggests that high threading dislocation density in the Ga0.35In0.65Sb IMF buffer could be due to the non-uniform microscopic distribution of indium and gallium atoms. This work is beneficial to the scientific community in the growth of the InAs0.32Sb0.68 material as it provides a novel approach to prepare a platform for the growth of the InAs0.32Sb0.68 material, which does not have a suitable lattice-matched substrate, on the widely available GaAs substrate. © 2021 Author(s).
Source Title: AIP Advances
ISSN: 2158-3226
DOI: 10.1063/5.0045483
Rights: Attribution 4.0 International
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