Please use this identifier to cite or link to this item:
Title: P-n heterojunctions composed of two-dimensional molecular crystals for high-performance ambipolar organic field-effect transistors
Authors: Yao, Jiarong
Tian, Xinzi
Yang, Shuyuan
Yang, Fangxu
Li, Rongjin
Hu, Wenping 
Issue Date: 1-May-2021
Publisher: American Institute of Physics Inc.
Citation: Yao, Jiarong, Tian, Xinzi, Yang, Shuyuan, Yang, Fangxu, Li, Rongjin, Hu, Wenping (2021-05-01). P-n heterojunctions composed of two-dimensional molecular crystals for high-performance ambipolar organic field-effect transistors. APL Materials 9 (5) : 051108. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: Bilayer p-n heterojunctions are promising structures to construct ambipolar organic field-effect transistors (aOFETs) for organic integrated circuits. However, due to the lack of effective strategies for high-quality p-n heterojunctions with clear interfaces, the performance of aOFETs is commonly and substantially lower than that of their unipolar counterparts, which hinders the development of aOFETs toward practical applications. Herein, a one-step solution crystallization strategy was proposed for the preparation of high-quality bilayer p-n heterojunctions. A mixed solution of a p- and an n-type organic semiconductor was dropped on a liquid substrate, and vertical phase separation occurred spontaneously during crystallization to produce bilayer p-n heterojunctions composed of molecularly thin two-dimensional molecular crystals. Due to the clear interface of the bilayer p-n heterojunctions, the maximum mobility (average mobility) reached 1.96 cm2 V-1 s-1 (1.12 cm2 V-1 s-1) for holes and 1.27 cm2 V-1 s-1 (0.61 cm2 V-1 s-1) for electrons in ambient air. So far as we know, these values were the highest among double-channel aOFETs measured in ambient air. This work provides a simple yet efficient strategy to construct high-quality bilayer p-n heterojunctions, which lays a foundation for their application in high-performance optoelectronic devices. © 2021 Author(s).
Source Title: APL Materials
ISSN: 2166-532X
DOI: 10.1063/5.0048790
Rights: Attribution 4.0 International
Appears in Collections:Elements
Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
10_1063_5_0048790.pdf8.32 MBAdobe PDF




checked on Nov 29, 2022

Page view(s)

checked on Dec 1, 2022

Google ScholarTM



This item is licensed under a Creative Commons License Creative Commons