Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.5079860
Title: | Single layer MoS2 nanoribbon field effect transistor | Authors: | Kotekar-Patil, D Deng, J Wong, SL Lau, Chit Siong Goh, Kuan Eng Johnson |
Keywords: | Science & Technology Physical Sciences Physics, Applied Physics MONOLAYER PERFORMANCE TRANSITION GROWTH WS2 |
Issue Date: | 7-Jan-2019 | Publisher: | AMER INST PHYSICS | Citation: | Kotekar-Patil, D, Deng, J, Wong, SL, Lau, Chit Siong, Goh, Kuan Eng Johnson (2019-01-07). Single layer MoS2 nanoribbon field effect transistor. APPLIED PHYSICS LETTERS 114 (1). ScholarBank@NUS Repository. https://doi.org/10.1063/1.5079860 | Abstract: | We study field effect transistor characteristics in etched single layer MoS 2 nanoribbon devices of width 50 nm with ohmic contacts. We employ a SF 6 dry plasma process to etch MoS 2 nanoribbons using low etching (RF) power allowing very good control over the etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5 V/dec using a global backgate. Moreover, we measure a high current density of 38 μA/μm, resulting in a high on/off ratio of the order of 10 5 . We observe mobility reaching as high as 50 cm 2 /V s with increasing source-drain bias. | Source Title: | APPLIED PHYSICS LETTERS | URI: | https://scholarbank.nus.edu.sg/handle/10635/230057 | ISSN: | 00036951 10773118 |
DOI: | 10.1063/1.5079860 |
Appears in Collections: | Staff Publications Elements |
Show full item record
Files in This Item:
File | Description | Size | Format | Access Settings | Version | |
---|---|---|---|---|---|---|
1811.01390v1.pdf | 2.08 MB | Adobe PDF | OPEN | Post-print | View/Download |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.