Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons

Abstract

Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low-temperature electron transport through etched 50-70 nm MoS2 nanoribbons showing current oscillations. Current through the device forms diamond-shaped domains as a function of source-drain and gate voltage. We associate these current oscillations and diamond-shaped current domains with Coulomb blockade due to single electron tunneling through a quantum dot formed in the MoS2 nanoribbon. From the size of the Coulomb diamond, we estimate the quantum dot size 10-35 nm. We discuss the possible origins of quantum dot in our nanoribbon device and prospects to control or engineer the quantum dot in such etched MoS2 nanoribbons which can be a promising platform for spin-valley qubits in two-dimensional transition metal dichalcogenides.