Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/230041
Title: Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons
Authors: Kotekar-Patil, Dharmraj
Deng, Jie
Wong, Swee Liang 
Goh, Kuan Eng Johnson 
Keywords: Science & Technology
Technology
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Engineering
Materials Science
Coulomb blockade
quantum dot
single electron transistor
monolayer
few layer
molybdenum disulfide (MoS2)
TMDC
quantum transport
quantum confinement
TRANSISTORS
PERFORMANCE
CONTACTS
GRAPHENE
ENHANCEMENT
CONDUCTANCE
TRANSITION
CHANNEL
DEVICES
STATES
Issue Date: 1-Nov-2019
Publisher: AMER CHEMICAL SOC
Citation: Kotekar-Patil, Dharmraj, Deng, Jie, Wong, Swee Liang, Goh, Kuan Eng Johnson (2019-11-01). Coulomb Blockade in Etched Single- and Few-Layer MoS2 Nanoribbons. ACS APPLIED ELECTRONIC MATERIALS 1 (11) : 2202-2207. ScholarBank@NUS Repository.
Abstract: Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low-temperature electron transport through etched 50-70 nm MoS2 nanoribbons showing current oscillations. Current through the device forms diamond-shaped domains as a function of source-drain and gate voltage. We associate these current oscillations and diamond-shaped current domains with Coulomb blockade due to single electron tunneling through a quantum dot formed in the MoS2 nanoribbon. From the size of the Coulomb diamond, we estimate the quantum dot size 10-35 nm. We discuss the possible origins of quantum dot in our nanoribbon device and prospects to control or engineer the quantum dot in such etched MoS2 nanoribbons which can be a promising platform for spin-valley qubits in two-dimensional transition metal dichalcogenides.
Source Title: ACS APPLIED ELECTRONIC MATERIALS
URI: https://scholarbank.nus.edu.sg/handle/10635/230041
ISSN: 26376113
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