Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41524-021-00665-8
Title: Valley-filling instability and critical magnetic field for interaction-enhanced Zeeman response in doped WSe2 monolayers
Authors: Xuan, Fengyuan 
Quek, Su Ying 
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Physical
Materials Science, Multidisciplinary
Chemistry
Materials Science
SPIN-LATTICE-RELAXATION
INVERSION LAYER
QUASI-PARTICLE
EFFECTIVE-MASS
CONDUCTION
ELECTRONS
TRANSITIONS
SURFACE
Issue Date: 9-Dec-2021
Publisher: NATURE PORTFOLIO
Citation: Xuan, Fengyuan, Quek, Su Ying (2021-12-09). Valley-filling instability and critical magnetic field for interaction-enhanced Zeeman response in doped WSe2 monolayers. NPJ COMPUTATIONAL MATERIALS 7 (1). ScholarBank@NUS Repository. https://doi.org/10.1038/s41524-021-00665-8
Abstract: Carrier-doped transition metal dichalcogenide (TMD) monolayers are of great interest in valleytronics due to the large Zeeman response (g-factors) in these spin-valley-locked materials, arising from many-body interactions. We develop an ab initio approach based on many-body perturbation theory to compute the interaction-enhanced g-factors in carrier-doped materials. We show that the g-factors of doped WSe2 monolayers are enhanced by screened-exchange interactions resulting from magnetic-field-induced changes in band occupancies. Our interaction-enhanced g-factors g* agree well with experiment. Unlike traditional valleytronic materials such as silicon, the enhancement in g-factor vanishes beyond a critical magnetic field Bc achievable in standard laboratories. We identify ranges of g* for which this change in g-factor at Bc leads to a valley-filling instability and Landau level alignment, which is important for the study of quantum phase transitions in doped TMDs. We further demonstrate how to tune the g-factors and optimize the valley-polarization for the valley Hall effect.
Source Title: NPJ COMPUTATIONAL MATERIALS
URI: https://scholarbank.nus.edu.sg/handle/10635/228888
ISSN: 20573960
DOI: 10.1038/s41524-021-00665-8
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