Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/224456
Title: Anneal-Free HZO-Based Ferroelectric Field-Effect Transistor for Back-End-of- Line-Compatible Monolithic 3D Integration
Authors: Tsai Shih-Hao
Chun-Kuei Chen
WANG XINGHUA 
UMESH CHAND 
SONU DEVI
Evgeny Zamburg 
THEAN VOON YEW, AARON 
Issue Date: 20-Apr-2022
Citation: Tsai Shih-Hao, Chun-Kuei Chen, WANG XINGHUA, UMESH CHAND, SONU DEVI, Evgeny Zamburg, THEAN VOON YEW, AARON (2022-04-20). Anneal-Free HZO-Based Ferroelectric Field-Effect Transistor for Back-End-of- Line-Compatible Monolithic 3D Integration. ScholarBank@NUS Repository.
Abstract: In this work, we develop anneal-free hafnium zirconium oxide (HZO)-based ferroelectric field-effect transistor (FeFET) with low thermal budget (≤350 °C) suitable for monolithic 3-dimensional (M3D) integration technology. Integrating with room temperature oxide semiconductor, the demonstrated FeFET is fully back-end-of-line (BEOL)-compatible, featuring Ion/off of >10^5, memory window (MW) of 0.7 V, and good retention performance of 1×10^4 s. Such excellent electrical characteristics are achieved by HZO surface energy engineering for the ferroelectric orthorhombic phase formation. Furthermore, FeFET exists 32 controllable states with the linearity (α) of 0.31 and -5.03 in potentiation (Pot) and depression (Dep).
URI: https://scholarbank.nus.edu.sg/handle/10635/224456
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