Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/212723
Title: ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS
Authors: HAN KAIZHEN
Keywords: IGZO, MOSFET, Mobility, Short Channel, Nanowire, Digital Etch
Issue Date: 16-Aug-2021
Citation: HAN KAIZHEN (2021-08-16). ADVANCED BACK-END-OF-LINE COMPATIBLE AMORPHOUS INDIUM-GALLIUM-ZINC-OXIDE-BASED TRANSISTORS FOR 3D MONOLITHIC INTEGRATED CIRCUITS. ScholarBank@NUS Repository.
Abstract: This thesis conducts investigations on amorphous indium-gallium-zinc-oxide-based (α-IGZO-based) transistors in terms of carrier transport, scaling effect, and advanced structure development. It was found that the field effect mobility (µeff) of IGZO-based transistor shows a positive correlation with temperature at low carrier concentration (Ncarrier), e.g. 1×1011 cm-2, while a temperature independent µeff can be achieved at high Ncarrier, e.g. 6×1012 cm-2, indicating the importance of equivalent oxide thickness scaling for realizing high performance IGZO-based electronics. When it comes to scaling study, IGZO show no notable mobility degradation until its thickness down to 3.6 nm. But channel length (LCH) down-scaling shows a plausible boosting on on-state performance. Hence, by scaling down channel thickness as well as the LCH, device with high on current and decent gate control can be obtained. In addition, nanowire structure is developed for IGZO-based transistors, which can achieve the ultimate control on short channel effects and significantly reduce the device footprint. In short, this thesis proves the great potential of IGZO-based electronic devices in back-end-of-line compatible applications.
URI: https://scholarbank.nus.edu.sg/handle/10635/212723
Appears in Collections:Ph.D Theses (Open)

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