Please use this identifier to cite or link to this item: https://doi.org/10.3390/mi10060369
Title: Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors
Authors: Lian, X.
Shen, X.
Lu, L.
He, N.
Wan, X.
Samanta, S. 
Tong, Y.
Keywords: Conductive filament
Quantum point contact
Resistance switching mechanism
Silicon oxide-based memristors
Variability
Weibull distribution
Issue Date: 2019
Publisher: MDPI AG
Citation: Lian, X., Shen, X., Lu, L., He, N., Wan, X., Samanta, S., Tong, Y. (2019). Resistance switching statistics and mechanisms of Pt dispersed silicon oxide-based memristors. Micromachines 10 (6) : 369. ScholarBank@NUS Repository. https://doi.org/10.3390/mi10060369
Rights: Attribution 4.0 International
Abstract: Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal-oxide-semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities. In this work, we have successfully obtained RS characteristics in Pt dispersed silicon oxide-based memristors. The RS variabilities and mechanisms have been analyzed by screening the statistical data into different resistance ranges, and the distributions are shown to be compatible with aWeibull distribution. Additionally, a quantum points contact (QPC) model has been validated to account for the conductive mechanism and further sheds light on the evolution of the CFs during RS processes. © 2019 by the authors.
Source Title: Micromachines
URI: https://scholarbank.nus.edu.sg/handle/10635/212300
ISSN: 2072666X
DOI: 10.3390/mi10060369
Rights: Attribution 4.0 International
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