Please use this identifier to cite or link to this item: https://doi.org/10.1126/sciadv.aaw7286
Title: Erasable and recreatable two-dimensional electron gas at the heterointerface of SrTiO3 and a water-dissolvable overlayer
Authors: Han, K.
Hu, K.
Li, X.
Huang, K.
Huang, Z. 
Zeng, S. 
Qi, D.
Ye, C.
Yang, J.
Xu, H.
Ariando, A. 
Yi, J.
Lü, W.
Yan, S.
Renshaw Wang, X.
Issue Date: 2019
Publisher: American Association for the Advancement of Science
Citation: Han, K., Hu, K., Li, X., Huang, K., Huang, Z., Zeng, S., Qi, D., Ye, C., Yang, J., Xu, H., Ariando, A., Yi, J., Lü, W., Yan, S., Renshaw Wang, X. (2019). Erasable and recreatable two-dimensional electron gas at the heterointerface of SrTiO3 and a water-dissolvable overlayer. Science Advances 5 (8) : eaaw7286. ScholarBank@NUS Repository. https://doi.org/10.1126/sciadv.aaw7286
Rights: Attribution-NonCommercial 4.0 International
Abstract: While benefiting greatly from electronics, our society also faces a major problem of electronic waste, which has already caused environmental pollution and adverse human health effects. Therefore, recyclability becomes a must-have feature in future electronics. Here, we demonstrate an erasable and recreatable two-dimensional electron gas (2DEG), which can be easily created and patterned by depositing a water-dissolvable overlayer of amorphous Sr3Al2O6 (a-SAO) on SrTiO3 (STO) at room temperature. The 2DEG can be repeatedly erased or recreated by depositing the a-SAO or dissolving in water, respectively. Photoluminescence results show that the 2DEG arises from the a-SAO-induced oxygen vacancy. Furthermore, by gradually depleting the 2DEG, a transition of nonlinear to linear Hall effect is observed, demonstrating an unexpected interfacial band structure. The convenience and repeatability in the creation of the water-dissolvable 2DEG with rich physics could potentially contribute to the exploration of next generation electronics, such as environment-friendly or water-soluble electronics. Copyright © 2019 The Authors.
Source Title: Science Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/212280
ISSN: 23752548
DOI: 10.1126/sciadv.aaw7286
Rights: Attribution-NonCommercial 4.0 International
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